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FDW2511NZ Download

partno	mfr	description	Magnitude	download
FDW2511NZ	FAIRCHILD	Fairchild Semiconductor [Dual N-Channel 2.5V Specified PowerTrench MOSFET]	261k

FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET December 2004 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Features ! 7.1A, 20V rDS(ON) =0.020, VGS = 4.5V rDS(ON) =0.025, VGS = 2.5V ! Extended VGS range (?12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications ! Load switch ! Battery charge ! Battery disconnect circuits G2 S2 S2 D2 G1 S1 S1 D1 D1 D2 G1 G2 TSSOP-8 Pin 1 S1 S2 ?2004 Fairchild Semiconductor Corporation FDW2511NZ Rev. A 1 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Absolute Maximum Ratings TA=25?C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V, RJA = 77oC/W) Continuous (TC = 100oC, VGS = 2.5V, RJA = 77oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25?C Operating and Storage Temperature Ratings 20 ?12 7.1 4.0 Figure 4 1.6 13 -55 to 150 Units V V A A A W mW/oC o ID C Thermal Characteristics RJA RJA Thermal Resistance Junction to Ambient (Note 1) Thermal Resistance Junction to Ambient (Note 2) 77 114 o C/W oC/W Package Marking and Ordering Information Device Marking 2511NZ 2511NZ Device FDW2511NZ FDW2511NZ_NL (Note 4) Package TSSOP-8 TSSOP-8 Reel Size 13" 13" Tape Width 12 mm 12 mm Quantity 2500 units 2500 units Electrical Characteristics TA = 25?C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250?A, VGS = 0V VDS = 16V VGS = 0V VGS = ?12V VGS = ?4.5V TA=100oC 20 1 5 ?10 ?250 V ?A ?A nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage VGS = VDS, ID = 250?A ID = 7.1A, VGS = 4.5V Drain to Source On Resistance ID = 6.9A, VGS = 4.0V ID = 6.5A, VGS = 3.1V ID = 6.3A, VGS = 2.5V 0.6 0.8 0.015 0.015 0.016 0.017 1.5 0.020 0.021 0.024 0.025 V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(2.5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 4.5V Total Gate Charge at 2.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 10V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 4.5V VGS = 0V to 2.5V VDD = 10V ID = 7.1A Ig = 1.0mA 1000 250 175 2.8 11.5 7.6 1.7 3.5 17.3 11.4 pF pF pF nC nC nC nC FDW2511NZ Rev. A 2 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Switching Characteristics tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time (VGS = 4.5V) VDD = 10V, ID = 7.1A VGS = 4.5V, RGS = 6.8 13 84 41 55 146 144 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Notes: 1. RJA is 77 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. 2. RJA is 114 oC/W (steady state) when mounted on a mininum copper pad on FR-4. 3 The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. FDW2511NZ_NL is lead free product. FDW2511NZ_NL marking will appear on the reel label. Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 1.3A ISD = 7.1A, dISD/dt = 100A/?s ISD = 7.1A, dISD/dt = 100A/?s - 0.7 - 1.2 27 16 V ns nC FDW2511NZ Rev. A 3 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Typical Characteristic 1.2 TA = 25?C unless otherwise noted 8 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 6 VGS = 4.5V 0.8 0.6 4 VGS = 2.5V 0.4 2 0.2 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) TA, AMBIENT TEMPERATURE (oC) 0 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature ZJA, NORMALIZED 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 400 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125 VGS = 2.5V 10 5 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 102 103 Figure 4. Peak Current Capability FDW2511NZ Rev. A 4 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Typical Characteristic (Continued) TA = 25?C unless otherwise noted 400 100 ID, DRAIN CURRENT (A) 100?s ID, DRAIN CURRENT (A) 30 TJ = 150oC 20 TJ = 25oC 40 PULSE DURATION = 80?s DUTY CYCLE = 0.5% MAX VDD = 10V 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 0.5 0.1 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 30 SINGLE PULSE TJ = MAX RATED TA = 25oC 10ms 10 TJ = -55oC 0 1.0 1.5 2.0 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 40 VGS = 10V ID, DRAIN CURRENT (A) Figure 6. Transfer Characteristics 40 VGS = 2.5V rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) PULSE DURATION = 80?s DUTY CYCLE = 0.5% MAX ID = 7.1A 30 30 VGS = 4.5V VGS = 1.8V 20 PULSE DURATION = 80?s DUTY CYCLE = 0.5% MAX 10 TA = 25oC 0 0 0.5 1.0 1.5 20 ID = 1A 10 1 2 3 4 5 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics Figure 8. Drain to Source On Resistance vs Gate Voltage and Drain Current 1.25 1.50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80?s DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250?A 1.25 1.00 1.00 0.75 VGS = 4.5V, ID = 7.1A 0.75 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.50 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature FDW2511NZ Rev. A 5 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Typical Characteristic (Continued) TA = 25?C unless otherwise noted 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250?A 1000 1.05 C, CAPACITANCE (pF) 2000 CISS = CGS + CGD COSS CDS + CGD 1.00 CRSS = CGD VGS = 0V, f = 1MHz 0.95 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 100 0.1 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4.5 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 10V Figure 12. Capacitance vs Drain to Source Voltage 3.0 1.5 WAVEFORMS IN DESCENDING ORDER: ID = 1A ID = 7.1A 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 Figure 13. Gate Charge Waveforms for Constant Gate Currents FDW2511NZ Rev. A 6 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG IAS VDD VDD tP VDS + IAS 0.01 0 tAV Figure 14. Unclamped Energy Test Circuit Figure 15. Unclamped Energy Waveforms VDS VDD L VGS Qg(TOT) VDS + VGS VGS = 4.5V VDD DUT Ig(REF) VGS = 1V 0 Qgs2 Qg(TH) Qgs Ig(REF) 0 Qgd Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveforms VDS tON td(ON) RL VDS 90% tr tOFF td(OFF) tf 90% VGS + VDD DUT 0 10% 10% RGS VGS VGS 0 10% 50% PULSE WIDTH 90% 50% Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms FDW2511NZ Rev. A 7 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET PSPICE Electrical Model .SUBCKT FDW2511NZ 2 1 3 ; Ca 12 8 1.1e-9 Cb 15 14 1.1e-9 Cin 6 8 0.8e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD DESD2 91 9 DESD2MOD DESD1 91 7 DESD1MOD Dplcap 10 5 DplcapMOD - rev July 2004 LDRAIN DPLCAP 10 RSLC1 51 ESLC 50 RLDRAIN DBREAK 11 + 17 EBREAK 18 MWEAK MMED MSTRO CIN LSOURCE 8 RSOURCE RLSOURCE S1A 12 S1B CA 13 + 6 8 13 8 S2A 14 13 S2B CB + EDS 5 8 8 RVTHRES 14 IT VBAT + 22 15 17 RBREAK 18 RVTEMP 19 7 SOURCE 3 5 DRAIN 2 RSLC2 5 51 ESG + LGATE GATE 1 RLGATE EVTEMP RGATE + 18 22 9 20 6 6 8 EVTHRES + 19 8 EGS Ebreak 11 7 17 18 24 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 9.1e-10 Ldrain 2 5 1e-9 Lsource 3 7 2.1e-10 RLgate 1 9 9.1 RLdrain 2 5 10 RLsource 3 7 2.1 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 1.0e-2 Rgate 9 20 2.75 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 Rsource 8 7 RsourceMOD 1.7e-3 Rvthres 22 8 Rvthresmod 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))} MODEL DbodyMOD D (IS=3.5E-11 RS=1.08e-2 IKF=.5 N= TRS1=8e-4 TRS2=6e-6 XTI=.1 +CJO=3.2e-10 TT=1.07e-8 M=0.68 TIKF=0.001) .MODEL DbreakMOD D (RS=1e-1 TRS1=9e-3 TRS2=-2.0e-5) .MODEL DESD1MOD D (BV=15.0 RS=1) .MODEL DESD2MOD D (BV=14.3 RS=1) .MODEL DplcapMOD D (CJO=0.70e-9 IS=1e-30 N=10 M=0.3) MODEL MstroMOD NMOS (VTO=1.21 KP=147 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MmedMOD NMOS (VTO=0.93 KP=1.7 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.75) .MODEL MweakMOD NMOS (VTO=0.752 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=27.5 RS=.1) MODEL RbreakMOD RES (TC1=5.0e-4 TC2=8e-7) .MODEL RdrainMOD RES (TC1=2.1e-3 TC2=3.4e-6) .MODEL RSLCMOD RES (TC1=1e-3 TC2=1e-5) .MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6) .MODEL RvtempMOD RES (TC1=-.9e-3 TC2=1e-7) .MODEL RvthresMOD RES (TC1=-1.1e-3 TC2=-4.0e-6) MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6 VOFF=-1.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-6) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5) ENDS *$ Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. FDW2511NZ Rev. A 8 + RDRAIN 21 16 DBODY www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET SABER Electrical Model REV July 2004 template fdw2511nz n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=3.5e-11,rs=1.08e-2,ikf=.5,trs1=8e-4,trs2=6e-6,xti=.1,cjo=3.2e-10,tt=1.07e-8,m=0.68,tikf=0.001) dp..model dbreakmod = (rs=1e-1,trs1=9e-3,trs2=-2.0e-5) dp..model dplcapmod = (cjo=0.70e-9,isl=10e-30,nl=10,m=0.3) m..model mstrongmod = (type=_n,vto=1.21,kp=147,is=1e-30, tox=1) m..model mmedmod = (type=_n,vto=0.93,kp=1.7,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=0.752,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6,voff=-1.5) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-1.5,voff=-6) sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.5,voff=0.3) LDRAIN DPLCAP 5 sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.5) c.ca n12 n8 = 1.1e-9 10 c.cb n15 n14 = 1.1e-9 RLDRAIN RSLC1 c.cin n6 n8 = 0.8e-9 51 RSLC2 DRAIN 2 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod desd2 91 9 desd2mod desd1 91 7 desd1mod dp.dplcap n10 n5 = model=dplcapmod spe.ebreak n11 n7 n17 n18 = 24 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 i.it n8 n17 = 1 l.lgate n1 n9 = 9.1e-10 l.ldrain n2 n5 = 1e-9 l.lsource n3 n7 = 2.1e-10 res.rlgate n1 n9 = 9.1 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 2.1 m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u LGATE GATE 1 RLGATE ISCL ESG + EVTEMP RGATE + 18 22 9 20 6 8 EVTHRES + 19 8 6 MSTRO CIN 8 50 RDRAIN 21 16 MWEAK MMED EBREAK + 17 18 DBREAK 11 DBODY LSOURCE 7 RLSOURCE SOURCE 3 RSOURCE S1A 12 S1B CA 13 + EGS 6 8 EDS 13 8 S2A 14 13 S2B CB + 5 8 8 22 RVTHRES 14 IT VBAT + 15 17 RBREAK 18 RVTEMP 19 res.rbreak n17 n18 = 1, tc1=5.0e-4,tc2=8e-7 m.desd1mod bv=15.0 rs=1) m.desd2mod bv=14.3 rs=1) res.rdrain n50 n16 = 1.0e-2, tc1=2.1e-3,tc2=3.4e-6 res.rgate n9 n20 = 2.75 res.rslc1 n5 n51 = 1e-6, tc1=1e-3,tc2=1e-5 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 1.7e-3, tc1=5e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-1.1e-3,tc2=-4.0e-6 res.rvtemp n18 n19 = 1, tc1=-.9e-3,tc2=1e-7 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5)) } } FDW2511NZ Rev. A 9 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET SPICE Thermal Model REV July 2004 FDW2511NZ_JA Junction Ambient Minimum copper pad area CTHERM1 Junction c2 5.7e-4 CTHERM2 c2 c3 5.72e-4 CTHERM3 c3 c4 5.8e-4 CTHERM4 c4 c5 4.7e-3 CTHERM5 c5 c6 5.1e-3 CTHERM6 c6 c7 0.02 CTHERM7 c7 c8 0.2 CTHERM8 c8 Ambient 6 RTHERM1 Junction c2 0.003 RTHERM2 c2 c3 0.25 RTHERM3 c3 c4 1.0 RTHERM4 c4 c5 1.1 RTHERM5 c5 c6 7.5 RTHERM6 c6 c7 33.6 RTHERM7 c7 c8 33.7 RTHERM8 c8 Ambient 33.8 th JUNCTION RTHERM1 2 CTHERM1 RTHERM2 3 CTHERM2 RTHERM3 4 CTHERM3 RTHERM4 5 CTHERM4 SABER Thermal Model SABER thermal model FDW2511NZ Minimum copper pad area template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th c2 = 5.7e-4 ctherm.ctherm2 c2 c3 = 5.72e-4 ctherm.ctherm3 c3 c4 = 5.8e-4 ctherm.ctherm4 c4 c5 = 4.7e-3 ctherm.ctherm5 c5 c6 = 5.1e-3 ctherm.ctherm6 c6 c7 = 0.02 ctherm.ctherm7 c7 c8 = 0.2 ctherm.ctherm8 c8 tl = 6 rtherm.rtherm1 th c2 = 0.003 rtherm.rtherm2 c2 c3 = 0.25 rtherm.rtherm3 c3 c4 = 1.0 rtherm.rtherm4 c4 c5 = 1.1 rtherm.rtherm5 c5 c6 = 7.5 rtherm.rtherm6 c6 c7 = 33.6 rtherm.rtherm7 c7 c8 = 33.7 rtherm.rtherm8 c8 tl = 33.8 } RTHERM5 CTHERM5 6 RTHERM6 7 CTHERM6 RTHERM7 8 CTHERM7 RTHERM8 CTHERM8 tl AMBIENT FDW2511NZ Rev. A 10 www.fairchildsemi.com FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench? MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST? FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM Across the board. Around the world.TM The Power Franchise? Programmable Active DroopTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC? OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench? QFET? QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ?SerDesTM SILENT SWITCHER? SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic? TINYOPTOTM TruTranslationTM UHCTM UltraFET? UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.fairchildsemi.com Preliminary No Identification Needed Full Production Obsolete Not In Production FDW2511NZ Rev. A 11 http://www.icinfo.net http://pdf.ecgoo.net

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