| partno | mfr | description | Magnitude | download |
|---|---|---|---|---|
| 3N100E | MOTOROLA | Motorola, Inc [TMOS POWER FET 3.0 AMPERES 1000 VOLTS] | 264k |  |
| 3N100E | MOTOROLA | Motorola, Inc [TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM] | 208k | |
| 3N128 | ETC | ETC [Silicon MOS Transistor] | 414k | |
| 3N142 | ETC | ETC [SILICON INSULATED GATE FIELD EFFECT TRANSISTOR] | 282k | |
| 3N143 | ETC | ETC [Silicon MOS Transistor] | 414k | |
| 3N152 | RICOH | RICOH electronics devices division [PWM/VFM Step-down DC/DC Converter] | 206k | |
| 3N153 | ETC | ETC [SILICON INSULATED GATE FIELD EFFECT TRANSISTOR] | 152k | |
| 3N154 | ETC | ETC [SILICON MOS TRANSISTOR] | 256k | |
| 3N161 | INTERSIL | Intersil Corporation [DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH] | 47k | |
| 3N163 | LINEAR | Linear Integrated Systems [P-CHANNEL ENHANCEMENT MODE] | 20k | |
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