2SA0794 Download

partno	mfr	description	Magnitude	download
2SA0794	PANASONIC	Panasonic Semiconductor [Silicon PNP epitaxial planar type]	95k

Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A 3.16?0.1 3.8?0.3 Unit: mm 8.0+0.5 ?0.1 3.2?0.2 Absolute Maximum Ratings Ta = 25?C Parameter Collector-base voltage (Emitter open) 2SA0794 2SA0794A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating -100 -120 -100 -120 -5 - 0.5 -1 1.2 150 -55 to +150 V A A W ?C ?C V Unit V 0.75?0.1 4.6?0.2 0.5?0.1 0.5?0.1 2.3?0.2 3 1.76?0.1 1 2 Collector-emitter voltage 2SA0794 (Base open) 2SA0794A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Electrical Characteristics Ta = 25?C ? 3?C Parameter Collector-emitter voltage (Base open) 2SA0794 2SA0794A VEBO hFE1 * Symbol VCEO Conditions IC = -100 ?A, IB = 0 IE = -1 ?A, IC = 0 VCE = -10 V, IC = -150 mA VCE = -5 V, IC = -500 mA IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -100 -120 -5 90 50 Typ 16.0?1.0 ? High collector-emitter voltage (Base open) VCEO ? Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier ? TO-126B package which requires no insulation plate for installation to the heat sink 1.9?0.1 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Max Emitter-base voltage (Collector open) Forward current transfer ratio 220 100 - 0.2 - 0.85 120 20 30 - 0.4 -1.20 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00001BED 3.05?0.1 Features 11.0?0.5 Unit V V V V 1 2SA0794, 2SA0794A PC Ta 1.6 -1.2 IC VCE TC = 25?C -18 mA IB = -20 mA -16 mA -14 mA -12 mA -10 mA -8 mA -6 mA -4 mA -2 mA IC I B -1.2 VCE = -10 V TC = 25?C Collector power dissipation PC (W) -1.0 -1.0 Collector current IC (A) - 0.8 0.8 - 0.6 - 0.4 0.4 - 0.2 0 0 40 80 120 160 0 Collector current IC (A) 1.2 - 0.8 - 0.6 - 0.4 - 0.2 0 -2 -4 -6 -8 -10 -12 0 0 -2 -4 -6 -8 -10 -12 -14 Ambient temperature Ta (?C) Collector-emitter voltage VCE (V) Base current IB (mA) IC VBE VCE = -10 V Ta = 125?C 75?C -25?C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 VBE(sat) IC IC / IB = 10 - 0.6 - 0.5 Collector current IC (A) -1 -1 TC = -25?C 100?C 25?C - 0.4 - 0.3 TC = 100?C 25?C -25?C - 0.2 - 0.1 - 0.1 - 0.1 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 - 0.01 - 0.01 - 0.1 -1 - 0.01 - 0.01 - 0.1 -1 Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) hFE IC 200 VCE = -10 V fT I E VCB = -10 V f = 200 MHz TC = 25?C 160 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 50 IE = 0 f = 1 MHz TC = 25?C 40 Forward current transfer ratio hFE 1 000 Transition frequency fT (MHz) TC = 100?C 25?C 100 -25?C 120 30 80 20 40 10 10 - 0.01 - 0.1 -1 0 1 10 100 0 -1 -10 -100 Collector current IC (A) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJD00001BED 2SA0794, 2SA0794A ICEO Ta 105 VCE = 20 V 104 ICBO Ta VCB = -20 V -10 Safe operation area Single pulse TC = 25?C ICP IC - 0.1 t=1s t = 10 ms 104 103 102 102 10 10 1 0 40 80 120 160 200 1 Collector current IC (A) 103 -1 ICBO (Ta) ICBO (Ta = 25?C) ICEO (Ta) ICEO (Ta = 25?C) - 0.01 0 40 80 120 160 - 0.001 -1 -10 -100 -1 000 Ambient temperature Ta (?C) Ambient temperature Ta (?C) Collector-emitter voltage VCE (V) SJD00001BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: ? Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL http://www.icinfo.net http://pdf.ecgoo.net

Related Electronics Part Number

partno	mfr	description	Magnitude	download
2SA0794	PANASONIC	Panasonic Semiconductor [Silicon PNP epitaxial planar type]	95k
2SA0794A	PANASONIC	Panasonic Semiconductor [Silicon PNP epitaxial planar type]	95k