2SA0720 Download

partno	mfr	description	Magnitude	download
2SA0720	PANASONIC	Panasonic Semiconductor [For low-frequency power amplification and driver amplification Complementary]	86k

Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Features ? Complementary pair with 2SC1317 and 2SC1318 0.7?0.1 Unit: mm 5.0?0.2 4.0?0.2 Parameter Collector-base voltage (Emitter open) 2SA0719 2SA0720 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -60 -25 -50 -5 -500 -1 625 150 -55 to +150 Unit V 0.45+0.15 ?0.1 12.9?0.5 0.45+0.15 ?0.1 2.5+0.6 ?0.2 1 2 3 2.5+0.6 ?0.2 Absolute Maximum Ratings Ta = 25?C Collector-emitter voltage 2SA0719 (Base open) 2SA0720 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 0.7?0.2 5.1?0.2 mA A mW ?C ?C Electrical Characteristics Ta = 25?C ? 3?C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SA0719 2SA0720 2SA0719 2SA0720 VEBO ICBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob IE = -10 ?A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 85 40 - 0.35 - 0.60 -1.1 200 6 15 -1.5 VCEO IC = -10 mA, IB = 0 Symbol VCBO Conditions IC = -10 ?A, IE = 0 Min -30 -60 -25 -50 -5 - 0.1 340 V ?A V V MHz pF V Typ Max Unit V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00002CED 2.3?0.2 V 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package 1 2SA0719, 2SA0720 PC Ta 800 -1 200 IC VCE Ta = 25?C -800 -700 IC I B VCE = -10 V Ta = 25?C Collector power dissipation PC (mW) 700 600 500 400 300 200 100 0 -1 000 Collector current IC (mA) -800 IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -600 -400 -200 0 20 40 60 80 100 120 140 160 0 Collector current IC (mA) -600 -500 -400 -300 -200 -100 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 -12 0 Ambient temperature Ta (?C) Collector-emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 VBE(sat) IC -100 hFE IC 600 VCE = -10 V Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 IC / IB = 10 -1 Ta = 75?C 25?C -25?C -10 Forward current transfer ratio hFE 500 400 25?C -1 Ta = -25?C 75?C - 0.1 300 Ta = 75?C 200 25?C -25?C - 0.01 - 0.1 100 - 0.001 -1 -10 -100 -1 000 - 0.01 -1 -10 -100 -1 000 0 - 0.01 - 0.1 -1 -10 Collector current IC (mA) Collector current IC (mA) Collector current IC (A) fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 240 VCB = -10 V Ta = 25?C 50 Cob VCB Collector-emitter voltage (V) (Resistor between B and E) VCER IE = 0 f = 1 MHz Ta = 25?C VCER RBE -120 IC = -2 mA Ta = 25?C Transition frequency fT (MHz) 200 40 -100 160 -80 30 120 -60 2SA0720 20 80 -40 2SA0719 -20 40 10 0 1 10 100 0 -1 -10 -100 0 1 10 100 1 000 Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (k) 2 SJC00002CED 2SA0719, 2SA0720 ICEO Ta 104 VCE = -10 V -10 Safe operation area Single pulse Ta = 25?C ICP IC t=1s 103 Collector current IC (mA) -1 t = 10 ms ICEO (Ta) ICEO (Ta = 25?C) 102 - 0.1 10 - 0.01 1 0 40 80 120 160 200 - 0.001 - 0.1 -1 -10 -100 Ambient temperature Ta (?C) Collector-emitter voltage VCE (V) SJC00002CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: ? Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL http://www.icinfo.net http://pdf.ecgoo.net

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partno	mfr	description	Magnitude	download
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