2N111 Download

partno	mfr	description	Magnitude	download
2N111	FAIRCHILD	Fairchild Semiconductor [Integrated N-Channel PowerTrench MOSFET and Schottky Diode]	283k

FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode August 2005 FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode General Description FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications Standard Buck Converter Features 4 A, 20 V RDS(ON) = 100m @ VGS = 4.5 V RDS(ON) = 150m @ VGS = 2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm PIN 1 A S/C G A 1 2 3 6 5 4 A S/C D C D S/C G A TOP MLP 3x3 S/C D BOTTOM Absolute Maximum Ratings TA = 25?C unless otherwise noted Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation (Steady State) Power dissipation (Steady State) Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings 20 ?12 4 10 20 2 1.7 0.8 -55 to +150 Units V V A V A W o C Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 70 150 o C/W oC/W Package Marking and Ordering Information Device Marking 2N111 Device FDFM2N111 Reel Size 7inch 1 Tape Width 12mm Quantity 3000 units FDFM2N111 Rev. C2 (W) ?2005 Fairchild Semiconductor Corporation FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode Electrical Characteristics TA = 25?C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, ID = 250?A, VGS = 0V ID = 250?A, Referenced to 25?C VGS = 0V, VDS = 16V VGS = ?12V, VDS = 0V 20 12 1 ?100 V mV/?C ?A nA On Characteristics (Note 2) VGS(TH) VGS(TH) TJ RDS(ON) ID(ON) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250?A ID = 250?A, Referenced to 25?C ID = 4.0A, VGS = 4.5V ID = 3.3A, VGS = 2.5V ID = 4.0A, VGS = 4.5V, TJ = 125?C VGS = 2.5V, VDS = 5V ID = 4A, VDS = 5V 0.6 10 1.0 -3 54 83 74 9.7 1.5 100 150 147 A S m V mV/?C Dynamic Characteristics CISS COSS CRSS RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz VGS = 0V, f = 1MHz, 273 63 37 1.6 pF pF pF Switching Characteristics (Note 2) td(ON) tr td(OFF) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 4.0A, VGS = 4.5V VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6 6 7 11 1.7 2.7 0.6 0.9 12 14 20 3.4 3.8 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = 1.4 A (Note 2) IF= 4.0A, dIF/dt=100A/?s 0.8 11 3 1.4 -1.2 A V ns nC Schottky Diode Characteristic VR IR VF Reverse Voltage Reverse Leakage Forward Voltage IR = 1mA VR = 5V IF = 1A TJ = 25?C TJ = 100?C TJ = 25?C 20 0.32 100 10 0.39 V ?A mA V 2 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode Electrical Characteristics TA = 25?C unless otherwise noted Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RCA is guaranteed by design while RCA is determined by the user's board design. a) 70oC/W when mounted on a 1in2 pad of 2 oz copper b) 150oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 ?s, Duty Cycle < 2.0% 3 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode Typical Characteristics 10 ID, DRAIN CURRENT (A) 8 3.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2 3.0V 1.8 VGS = 2.5V 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.0V 4.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.2 ID = 4A VGS = 4.5V 1.4 ID = 2A 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 TA = 25oC 1.2 TA = 125oC 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 10 TA = -55oC 25oC 125oC 6 100 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 8 10 1 0.1 0.01 0.001 0.0001 VGS = 0V TA = 125oC 25oC -55oC 4 2 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode Typical Characteristics 6 VGS, GATE-SOURCE VOLTAGE (V) ID = 4A 5 4 3 2 1 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 VDS = 5V 15V CAPACITANCE (pF) 400 10V 350 300 250 200 150 100 50 0 0 4 8 12 16 Crss Coss Ciss f = 1MHz VGS = 0 V 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics IF, FORWARD LEAKAGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) 10 TJ = 125oC 0.1 TJ = 125 C 0.01 o 1 TJ = 25 C 0.1 o 0.001 TJ = 100 C o 0.0001 o 0.01 0.00001 TJ = 25 C 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Figure 11. Transient Thermal Response Curve 5 FDFM2N111 Rev. C2(W) FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 6 FDFM2N111 Rev. C2 (W) FDFM2N111 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST? FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise? Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC? OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench? QFET? QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ?SerDesTM SILENT SWITCHER? SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic? TINYOPTOTM TruTranslationTM UHCTM UltraFET? UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 7 FDFM2N111 Rev. C2 (W) http://www.icinfo.net http://pdf.ecgoo.net

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