1PS302 Download

partno	mfr	description	Magnitude	download
1PS302	PHILIPS	Philips Semiconductors [High-speed double diode]	56k

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D187 1PS302 High-speed double diode Product specification Supersedes data of 1996 Oct 04 1999 May 06 Philips Semiconductors Product specification High-speed double diode FEATURES ? Very small plastic SMD package ? High switching speed: max. 4 ns ? Continuous reverse voltage: max. 80 V ? Repetitive peak reverse voltage: max. 85 V ? Repetitive peak forward current: max. 500 mA. APPLICATIONS ? High-speed switching in e.g. surface mounted circuits. 2 1 1PS302 PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection DESCRIPTION The 1PS302 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70-3 package. 2 1 3 3 Top view Marking code: C3. MAM083 Fig.1 Simplified outline (SOT323; SC70-3) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 ?C prior to surge t = 1 ?s t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 ?C; note 1 - - - -65 - 4 0.5 300 +150 150 A A mW ?C ?C - - - - - 85 80 200 170 500 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT 1999 May 06 2 Philips Semiconductors Product specification High-speed double diode ELECTRICAL CHARACTERISTICS Tj = 25 ?C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IR reverse current see Fig.4 VR = 25 V VR = 80 V VR = 25 V; Tj = 150 ?C VR = 80 V; Tj = 150 ?C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.5 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 - - - - - - 30 0.5 30 100 1.5 4 610 740 - - - - 1.0 1.2 PARAMETER CONDITIONS TYP. 1PS302 MAX. UNIT mV mV V V nA ?A ?A ?A pF ns Vfr forward recovery voltage - 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 200 415 UNIT K/W K/W 1999 May 06 3 Philips Semiconductors Product specification High-speed double diode GRAPHICAL DATA MBG443 1PS302 handbook, halfpage 300 handbook, halfpage 300 MBG382 IF (mA) 200 IF (mA) (1) (1) (2) (3) 200 (2) 100 100 0 0 100 Tamb (oC) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. (1) Tj = 150 ?C; typical values. (2) Tj = 25 ?C; typical values. (3) Tj = 25 ?C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, halfpage IR (?A) 10 MBG380 handbook, halfpage 0.8 MBG446 Cd (pF) 0.6 1 (1) (2) (3) 0.4 10 1 0.2 10 2 0 100 Tj (oC) 200 0 0 4 8 12 VR (V) 16 (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 ?C. Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1999 May 06 4 Philips Semiconductors Product specification High-speed double diode 1PS302 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.6 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.7 Forward recovery voltage test circuit and waveforms. 1999 May 06 5 Philips Semiconductors Product specification High-speed double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads 1PS302 SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 May 06 6 Philips Semiconductors Product specification High-speed double diode DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values 1PS302 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 06 7 Philips Semiconductors ? a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 ? Philips Electronics N.V. 1999 Internet: http://www.semiconductors.philips.com SCA 64 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 May 06 Document order number: 9397 750 05896 http://www.icinfo.net http://pdf.ecgoo.net

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1PS302	PHILIPS	Philips Semiconductors [High-speed double diode]	56k